r 201510j 1/8 ?? triacs 3ct12s ? main characteristics i t(rms) 12a v drm 600v or 800v i gt 35ma ? applications z z ac switching z z phase control ? features z ??? ??? z planar chip for reliability and uniform ? package pin description 1 1 mt1 2 2 mt2 3 ? g z ???k ? ? z uniform gate trigger currents in three quadrants z rohs ? z rohs products z ? ul ? e258645 z ul e258645 ? order messages order code ? marking ? package ? packaging 3ct12s-o-z-n-c 3ct12s to-220 ? bag 3ct12s-o-j-n-b 3ct12s to-220s tube 3CT12S-O-HF-N-B 3ct12s to-220hf tube general description 3ct12s ????????????? ?????? dv/dt di/dt ????? ???? to-220 to-220s (???) to-220hf ?? 3ct12s are planar three quadrant triacs, designed for high performance full-wave ac control applications where high static and dynamic dv/dt and high di/dt can occur. they are specially recommended for use on inductive loads such as motor control circuits. available packages are to-220 to-220s (internally isolated) and to-220hf (plastic envelope) to-220/to-220s to-220hf
r 3ct12s 201510j 2/8 ?? absolute ratings (t c =25 ) ? parameter symbol condition ? value unit ???? repetitive peak off-state voltage v drm 600 800 v ?? on-state rms current i t(rms) full sine wave 12 a full sine wave ,t=20ms 95 a ????? non- repetitive surge peak on-state current i tsm full sine wave ,t=16.7ms 105 a i 2 t t=10ms 45 a 2 s ??? repetitive rate of rise of on-state current after triggering di/dt i tm =20a, i g =0.2a, di g /dt=0.2a/ s 100 a/ s ?? peak gate current i gm 2 a ??? peak gate voltage v gm 5 v ?? peak gate power p gm 5 w ?? average gate power p g(av) over any 20ms period 0.5 w ? storage temperature t stg -40~150 operation junction temperature t vj 125
r 3ct12s 201510j 3/8 electrical characteristic (t c =25 ) ? parameter symbol condition min typ max unit ??? peak repetitive blocking current i drm v dm =v drm , tj=125 , gate open - - 0.8 ma ???? peak on-state voltage v tm i tm =17a - 1.3 1.7 v mt1(-),mt2(+),g(+) 2 - 35 ma mt1(-),mt2(+),g(-) 2 - 35 ma ? gate trigger current i gt v dm =12v, r l =100 mt1(+),mt2(-),g(-) 2 - 35 ma mt1(-),mt2(+),g(+) - 0.7 1.5 v mt1(-),mt2(+),g(-) - 0.7 1.5 v ?? gate trigger voltage v gt v dm =12v, r l =100 mt1(+),mt2(-),g(-) - 0.7 1.5 v ?? holding current i h v dm =12v, i gt =0.1a - - 35 ma mt1(-),mt2(+),g(+) - - 50 ma mt1(-),mt2(+),g(-) - - 60 ma ? latching current i l v dm =12v, i gt =0.1a mt1(+),mt2(-),g(-) - - 50 ma ??? rise of off- state voltage dv/dt v dm =67% v drm(max) , tj=125 , gate open 1000 - - v/ s ??? gate controlled turn-on time tgt i tm =16a, v dm =v drm(max) , i g =0.1a, di g /dt=5a/ s - 2 - s thermal characteristic ? parameter symbol condition min typ max unit full cycle(to-220) 1.5 /w full cycle(to-220s) 2.4 /w ??? thermal resistance junction to case r th(j-c) full cycle(to-220hf) 4.0 /w ? electrical isolation ? parameter symbol condition ? value unit 1 minute, leads to m ounting tab to-220s 2000 v ?? isolation voltage v isol 1 minute, leads to mounting tab to-220hf 2000 v
r 3ct12s 201510j 4/8 electrical characteristics (curves) p tot - i t(rms) i t(rms) ? tc ???? ptot(w) ?? i t rms (a) ?? i t rms a ? tc( ) i tsm - tp i t(rms) - ts ??? i tsm (a) ?? i t rms (a) tp(ms) ? ts(s) i gt (tj)/i gt (25 ) - tj v tm - i t ? i gt (tj)/i gt (25 ) i t (a) tj( ) ??? v tm (v)
r 3ct12s 201510j 5/8 electrical characteristics (curves) i tsm - tp ??? i tsm (a) tp
r 3ct12s 201510j 6/8 ? package mechanical data to-220/to-220s unit mm ???? to-220s ????? note for customer requirements the top of to-220s mounting base can be formed as angle.
r 3ct12s 201510j 7/8 ? package mechanical data to-220hf unit mm
r 3ct12s 201510j 8/8 ? note 1. ???????? ?????? ???? 2. ???? ?? 3. ????? ?????? 4. ??? 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering, please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? contact jilin sino-microelectronics co., ltd. ???? 99 add: no.99 shenzhen street, jilin city, jilin province, china. ?? 132013 post code: 132013 ? 86-432-64678411 te l 86-432-64678411 86-432-64665812 fax 86-432-64665812 ? www.hwdz.com.cn web site www.hwdz.com.cn ? market department ??? 99 add: no.99 shenzhen st reet, jilin city, jilin province, china. ?? 132013 post code: 132013 86-432-64675588 64675688 64678411 tel: 86-432-64675588 64675688 64678411 86-432-64671533 fax: 86-432-64671533 ? appendix ?? revision history date ? last rev. new rev. ? description of changes 2010-8-11 200911h 201008i ? itsm 2015-10-22 201008i 201510j ?
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